Epoxy resin composition for encapsulating a semiconductor device and semiconductor device prepared using the same

ABSTRACT

An epoxy resin composition and a semiconductor device, the composition including an epoxy resin; a curing agent; an inorganic filler; a curing catalyst; and a silicon compound, wherein the curing catalyst includes a phosphonium compound represented by the following Formula 4 and the silicon compound comprises a silicon compound represented by the following Formula 7:

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2015-0095580, filed on Jul. 3, 2015, inthe Korean Intellectual Property Office, and entitled: “Epoxy ResinComposition for Encapsulating Semiconductor Device and SemiconductorDevice Prepared Using the Same,” is incorporated by reference herein inits entirety.

BACKGROUND

1. Field

Embodiments relate to an epoxy resin composition for encapsulation of asemiconductor device and a semiconductor device prepared using the same.

2. Description of the Related Art

Transfer molding may be used as a method of packaging semiconductordevices (such as integrated circuits (ICs) and large scale integration(LSI) chips) with epoxy resin compositions to obtain semiconductordevices due to its advantages of low cost and suitability for massproduction. In transfer molding, modification of epoxy resins or phenolresins as curing agents may lead to improvement in characteristics andreliability of semiconductor devices.

Epoxy resin compositions may include an epoxy resin, a curing agent, acuring catalyst, and the like. As the curing catalyst, imidazolecatalysts, amine catalysts, and phosphine catalysts may be used.

SUMMARY

Embodiments are directed to an epoxy resin composition for encapsulationof a semiconductor device and a semiconductor device prepared using thesame.

The embodiments may be realized by providing an epoxy resin compositionfor encapsulation of a semiconductor device, the composition includingan epoxy resin; a curing agent; an inorganic filler; a curing catalyst;and a silicon compound, wherein the curing catalyst includes aphosphonium compound represented by the following Formula 4:

wherein, in Formula 4, R₁, R₂, R₃, and R₄ are each independently asubstituted or unsubstituted C₁ to C₃₀ aliphatic hydrocarbon group, asubstituted or unsubstituted C₆ to C₃₀ aromatic hydrocarbon group, or asubstituted or unsubstituted C₁ to C₃₀ hydrocarbon group including ahetero atom; X₁ is a substituted or unsubstituted C₆ to C₃₀ arylenegroup, a substituted or unsubstituted C₃ to C₁₀ cycloalkylene group, ora substituted or unsubstituted C₁ to C₂₀ alkylene group; R₅ is hydrogen,a hydroxyl group, a C₁ to C₂₀ alkyl group, a C₆ to C₃₀ aryl group, a C₃to C₃₀ heteroaryl group, a C₃ to C₁₀ cycloalkyl group, a C₃ to C₁₀heterocycloalkyl group, a C₇ to C₃₀ arylalkyl group, or a C₁ to C₃₀heteroalkyl group; and m is an integer of 0 to 5, wherein the siliconcompound comprises a silicon compound represented by the followingFormula 7:

wherein, in Formula 7, R₆, R₇, R₈, R₉, R₁₀, R₁₁, R₁₂, and R₁₃ are eachindependently a substituted or unsubstituted C₁ to C₁₀ alkyl group oraryl group; W, X, Y and Z are each independently a substituted orunsubstituted C₁ to C₁₅₀ aliphatic hydrocarbon group, a substituted orunsubstituted C₆ to C₃₀ aromatic hydrocarbon group, a substituted orunsubstituted C₁ to C₃₀ hydrocarbon group including a hetero atom,hydrogen, an epoxy-containing group, an amino group, a nitro group, acarboxyl group, an ester-containing group, an ether-containing group, ahalogen group, or a hydroxyl group; a, b and c are each independently aninteger of 0 to 30; and a+b+c is an integer of 5 or more.

R₁, R₂, R₃, and R₄ may each independently be a substituted orunsubstituted C₆ to C₃₀ aryl group.

At least one of R₁, R₂, R₃, and R₄ may be a hydroxyl group-substitutedC₆ to C₃₀ aryl group.

The phosphonium compound may be represented by one of the followingFormulae 4a to 4h:

W, X, Y and Z may each independently be a group represented by one ofthe following Formulae 7a to 7c, in which * is a bonding site,

wherein, in Formula 7a, R₁₄ is a C₁ to C₁₀ alkylene group or a C₆ to C₂₀arylene group, and R₁₅ is hydrogen or a C₁ to C₃₀ alkyl group.

[Formula 7b]

*—[R₁₆—O]_(d)—[R₁₇—O]_(e)—R₁₈  Formula 7b

wherein, in Formula 7b, R₁₆ and R₁₇ are each independently a C₁ to C₂₀alkylene group or a C₆ to C₂₀ arylene group; R₁₈ is hydrogen or a C₁ toC₃₀ alkyl group; d and e are each independently an integer of 0 to 30;and d+e is an integer of 3 to 60.

wherein, in Formula 7c, R₁₉, R₂₀ and R₂₁ are each independently a C₁ toC₂₀ alkylene group or a C₆ to C₂₀ arylene group; f and g are eachindependently an integer of 0 to 30; and f+g is an integer of 3 to 60.

The epoxy resin may include a bisphenol A epoxy resin, a bisphenol Fepoxy resin, a phenol novolac epoxy resin, a tert-butyl catechol epoxyresin, a naphthalene epoxy resin, a glycidylamine epoxy resin, a cresolnovolac epoxy resin, a biphenyl epoxy resin, a linear aliphatic epoxyresin, a cycloaliphatic epoxy resin, a heterocyclic epoxy resin, a spiroring-containing epoxy resin, a cyclohexane dimethanol epoxy resin, atrimethylol epoxy resin, or a halogenated epoxy resin.

The curing agent may include a phenol aralkyl phenol resin, a phenolnovolac phenol resin, a xyloc phenol resin, a cresol novolac phenolresin, a naphthol phenol resin, a terpene phenol resin, a polyfunctionalphenol resin, a dicyclopentadiene-based phenol resin, a novolac phenolresin synthesized from bisphenol A and resorcinol, a polyhydric phenoliccompound, an acid anhydride, or an aromatic amine.

The curing catalyst may be present in the epoxy resin composition in anamount of about 0.01 wt % to about 5 wt %, in terms of solid content.

The phosphonium compound may be present in the curing catalyst in anamount of about 10 wt % to about 100 wt %, based on a total weight ofthe curing catalyst.

The silicon compound may be present in the epoxy resin composition in anamount of about 0.01 wt % to about 1.5 wt %, in terms of solid content.

The epoxy resin composition may have a curing shrinkage rate of lessthan about 0.40%, as calculated according to the following Equation 1:

<Equation 1>

Curing shrinkage=(|C−D|/C)×100  Equation 1

wherein, in Equation 1, C is a length of a specimen obtained by transfermolding of the epoxy resin composition at 175° C. under a load of 70kgf/cm², and D is a length of the specimen after post-curing thespecimen at 170° C. to 180° C. for 4 hours and cooling.

The epoxy resin composition may have a storage stability of about 85% ormore, as calculated according to the following Equation 2:

<Equation 2>

Storage stability=(F1/F0)×100  Equation 2

wherein, in Equation 2, F1 is a flow length in inches of the epoxy resincomposition measured after storing the composition at 25° C./50% RH for72 hours using a transfer molding press at 175° C. and 70 kgf/cm² inaccordance with EMMI-1-66, and F0 is an initial flow length in inches ofthe epoxy resin composition.

m may be 0 or 1.

The embodiments may be realized by providing a semiconductor deviceencapsulated with the epoxy resin composition according to anembodiment.

The embodiments may be realized by providing a method of encapsulating asemiconductor device, the method comprising encapsulating thesemiconductor device with the epoxy resin composition according to anembodiment.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will be apparent to those of skill in the art by describing indetail exemplary embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a cross-sectional view of a semiconductor deviceaccording to one embodiment.

FIG. 2 illustrates a cross-sectional view of a semiconductor deviceaccording to another embodiment.

FIG. 3 illustrates a cross-sectional view of a semiconductor deviceaccording to a further embodiment.

DETAILED DESCRIPTION

Example embodiments will now be described more fully hereinafter withreference to the accompanying drawings; however, they may be embodied indifferent forms and should not be construed as limited to theembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey exemplary implementations to those skilled in the art.

In the drawing figures, the dimensions of layers and regions may beexaggerated for clarity of illustration. It will also be understood thatwhen a layer or element is referred to as being “on” another layer orelement, it can be directly on the other layer or element, orintervening layers may also be present. Like reference numerals refer tolike elements throughout.

As used herein, the term “substituted” in “substituted or unsubstituted”means that at least one hydrogen atom in the corresponding functionalgroup is substituted with a hydroxyl group, a halogen atom, an aminogroup, a nitro group, a cyano group, a C₁ to C₂₀ alkyl group, a C₁ toC₂₀ haloalkyl group, a C₆ to C₃₀ aryl group, a C₃ to C₃₀ heteroarylgroup, a C₃ to C₁₀ cycloalkyl group, a C₃ to C₁₀ heterocycloalkyl group,a C₇ to C₃₀ arylalkyl group, or a C₁ to C₃₀ heteroalkyl group. The term“halo” means fluorine, chlorine, iodine or bromine.

As used herein, the term “aryl group” refers to a substituent in whichall elements in the cyclic substituent have p-orbitals and thep-orbitals form a conjugated system. Aryl groups include mono- or fusedfunctional groups (namely, rings of carbon atoms which share adjacentelectron pairs). The term “unsubstituted aryl group” refers to amonocyclic or fused polycyclic C₆ to C₃₀ aryl group. Examples ofunsubstituted aryl groups include phenyl groups, biphenyl groups,naphthyl groups, naphthol groups, and anthracenyl groups, without beinglimited thereto.

As used herein, the term “heteroaryl group” means a C₆ to C₃₀ aryl groupin which a ring comprises carbon atoms and 1 to 3 heteroatoms selectedfrom nitrogen, oxygen, sulfur and phosphorus. Examples of heteroarylgroups include, but are not limited to, pyridinyl, pyrazinyl, pyrimidyl,pyridazinyl, triazinyl, quinolinyl, isoquinolinyl, quinoxalinyl,acridinyl, quinazolinyl, cinnolinyl, phthalazinyl, thiazolyl,benzothiazolyl, isoxazolyl, benzisoxazolyl, oxazolyl, benzoxazolyl,pyrazolyl, indazolyl, imidazolyl, benzimidazolyl, purinyl, thiophenyl,benzothiophenyl, furanyl, benzofuranyl, and isobenzofuranyl.

As used herein, the term “hetero” in “heterocycloalkyl group”,“heteroaryl group”, “heterocycloalkylene group”, and “heteroaryllenegroup” refers to an atom selected from nitrogen, oxygen, sulfur orphosphorus.

In accordance with an embodiment, an epoxy resin composition forencapsulation of a semiconductor device may include, e.g., (A) an epoxyresin, (B) a curing agent, (C) an inorganic filler, (D) a curingcatalyst, and (E) a silicon compound.

(A) Epoxy Resin

In an implementation, the epoxy resin may have two or more epoxy groupsper molecule. Examples of epoxy resins may include bisphenol A typeepoxy resins, bisphenol F type epoxy resins, phenol novolac type epoxyresins, tert-butyl catechol type epoxy resins, naphthalene type epoxyresins, glycidyl amine type epoxy resins, cresol novolac type epoxyresins, biphenyl type epoxy resins, linear aliphatic epoxy resins,cycloaliphatic epoxy resins, heterocyclic epoxy resins, spiroring-containing epoxy resins, cyclohexane dimethanol type epoxy resins,trimethylol type epoxy resins, and halogenated epoxy resins. These epoxyresins may be used alone or in combination thereof. In animplementation, the epoxy resins may have two or more epoxy groups andone or more hydroxyl groups per molecule. The epoxy resins may includeat least one of solid phase epoxy resins and liquid phase epoxy resins.In an implementation, the solid phase epoxy resin may be used.

In an implementation, the epoxy resin may be a biphenyl type epoxy resinrepresented by Formula 1.

In Formula 1, R may be a C₁ to C₄ alkyl group, and n may be 0 to 7 onaverage.)

The composition may include the epoxy resin in an amount of about 2 wt %to about 17 wt %, e.g., about 3 wt % to about 15 wt % or about 3 wt % toabout 12 wt %, in terms of solid content. Within this range, thecomposition may help secure curability.

(B) Curing Agent

In an implementation, the curing agent may include, e.g., phenolaralkyltype phenol resins, phenol novolac type phenol resins, xyloc type phenolresins, cresol novolac type phenol resins, naphthol type phenol resins,terpene type phenol resins, multifunctional phenol resins,dicyclopentadiene-based phenol resins, novolac type phenol resinssynthesized from bisphenol A and resol, polyhydric phenol compounds(e.g., tris(hydroxyphenyl)methane and dihydroxybiphenyl), acidanhydrides (e.g., maleic anhydride and phthalic anhydride), and aromaticamines (e.g., meta-phenylenediamine, diaminodiphenylmethane, anddiaminodiphenylsulfone), or the like. In an implementation, the curingagent may be a phenol resin having one or more hydroxyl groups.

In an implementation, the curing agent may be a xyloc type phenol resinrepresented by Formula 2 or a phenolaralkyl type phenol resinrepresented by Formula 3.

In Formula 2, n may be, e.g., 0 to 7 on average.

In Formula 3, n may be, e.g., 1 to 7 on average.

In an implementation, the curing agent may be present in the epoxy resincomposition in an amount of about 0.5 wt % to about 13 wt %, e.g., about1 wt % to about 10 wt % or about 2 wt % to about 8 wt %, in terms ofsolid content. Within this range, the epoxy resin composition may helpsecure curability.

(C) Inorganic Filler

The epoxy resin composition may further include an inorganic filler. Theinorganic filler may help improve mechanical properties of the epoxyresin composition while reducing stress in the epoxy resin composition.Examples of the inorganic filler may include fused silica, crystallinesilica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay,talc, calcium silicate, titanium oxide, antimony oxide, and glassfibers.

In an implementation, fused silica having a low coefficient of linearexpansion may be used with a view toward stress reduction. The fusedsilica refers to amorphous silica having a specific gravity of 2.3 orless. The fused silica may be prepared by melting crystalline silica ormay include amorphous silica products synthesized from various rawmaterials. In an implementation, the inorganic fillers may include about40 wt % to about 100 wt % of a fused silica mixture based on the totalweight of the inorganic fillers, wherein the fused silica mixtureincludes about 50 wt % to about 99 wt % of spherical fused silica havingan average particle diameter of about 5 μm to about 30 μm and about 1 wt% to about 50 wt % of spherical fused silica having an average particlediameter of about 0.001 μm to about 1 μm. In an implementation, theinorganic filler may be adjusted to a maximum particle diameter of about45 μm, about 55 μm or about 75 μm, depending upon application of theepoxy resin composition. In an implementation, the spherical fusedsilica may include conductive carbon as a foreign substance on thesurface of silica, and the spherical fused silica may incorporate asmaller amount of polar foreign substances.

The inorganic filler may be present in a suitable amount depending upondesired physical properties of the epoxy resin composition, e.g.,moldability, low-stress properties, and high-temperature strength. In animplementation, the inorganic filler may be present in the compositionin an amount of about 70 wt % to about 95 wt %, e.g., about 75 wt % toabout 92 wt %, in terms of solid content. Within this range, the epoxyresin composition may help secure high reliability, flowability, andreliability.

(D) Curing Catalyst

The epoxy resin composition may include a curing catalyst including thephosphonium compound represented by Formula 4.

The curing catalyst may include a phosphonium compound that includes aphosphonium cation and an anion having a hydroxyl group and an amidegroup at the same time, and may be represented by Formula 4.

In Formula 4, R₁, R₂, R₃, and R₄ may each independently be or include,e.g., a substituted or unsubstituted C₁ to C₃₀ aliphatic hydrocarbongroup, a substituted or unsubstituted C₆ to C₃₀ aromatic hydrocarbongroup, or a substituted or unsubstituted C₁ to C₃₀ hydrocarbon groupincluding a hetero atom. X₁ may be or may include, e.g., a substitutedor unsubstituted C₆ to C₃₀ arylene group, a substituted or unsubstitutedC₃ to C₁₀ cycloalkylene group, or a substituted or unsubstituted C₁ toC₂₀ alkylene group. R₅ may be, e.g., hydrogen, a hydroxyl group, a C₁ toC₂₀ alkyl group, a C₆ to C₃₀ aryl group, a C₃ to C₃₀ heteroaryl group, aC₃ to C₁₀ cycloalkyl group, a C₃ to C₁₀ heterocycloalkyl group, a C₇ toC₃₀ arylalkyl group, or a C₁ to C₃₀ heteroalkyl group. m may be, e.g.,an integer of 0 to 5.

In an implementation, in Formula 1, R₁, R₂, R₃, and R₄ may eachindependently be or include, e.g., a substituted or unsubstituted C₆ toC₃₀ aryl group.

In an implementation, in Formula 1, at least one of R₁, R₂, R₃, and R₄may be, e.g., a hydroxyl group-substituted C₆ to C₃₀ aryl group.

In an implementation, the phosphonium compound may be a compoundrepresented by one of the following Formulae 4a to 4h.

The phosphonium compound may have a melting point of about 100° C. toabout 130° C., e.g., 120° C. to 125° C. The phosphonium compound may bewater-insoluble. Within this range, the phosphonium compound can becured at low temperature.

The phosphonium compound may be added to a composition including atleast one of an epoxy resin, a curing agent, and inorganic filler so asto be used as a latent curing catalyst.

The phosphonium compound may help accelerate curing of the epoxy resinand the curing agent, and may help minimize viscosity change in amixture including the epoxy resin, the curing agent, and the like withindesired ranges of time and temperature while securing secure lowtemperature curability and high storage stability of the composition.The phosphonium compound may help promote curing only at a desiredcuring temperature without any curing activity at temperature deviatingfrom a desired curing temperature range, and the phosphonium compoundmay facilitate long term storage of the epoxy resin composition withoutviscosity change. Proceeding of a curing reaction may cause an increasein viscosity and deterioration in flowability when the epoxy resincomposition is liquid, and may exhibit viscosity when the epoxy resincomposition is solid.

The phosphonium compound may be prepared by reacting aphosphonium-containing cation-containing compound represented by Formula5 with an anilide-containing anion-containing compound represented byFormula 6:

In Formula 5, R₁, R₂, R₃, and R₄ may each independently be or include,e.g., a substituted or unsubstituted C₁ to C₃₀ aliphatic hydrocarbongroup, a substituted or unsubstituted C₆ to C₃₀ aromatic hydrocarbongroup, or a substituted or unsubstituted C₁ to C₃₀ hydrocarbon groupincluding a hetero atom. Y₁ may be, e.g., a halogen.

In Formula 6, X₁ may be or may include, e.g., a substituted orunsubstituted C₆ to C₃₀ arylene group, a substituted or unsubstituted C₃to C₁₀ cycloalkylene group, or a substituted or unsubstituted C₁ to C₂₀alkylene group. R₅ may be, e.g., hydrogen, a hydroxyl group, a C₁ to C₂₀alkyl group, a C₆ to C₃₀ aryl group, a C₃ to C₃₀ heteroaryl group, a C₃to C₁₀ cycloalkyl group, a C₃ to C₁₀ heterocycloalkyl group, a C₇ to C₃₀arylalkyl group, or a C₁ to C₃₀ heteroalkyl group. m may be, e.g., aninteger of 0 to 5. M may be, e.g., an alkali metal or Ag.

The halogen may include, e.g., fluorine, chlorine, bromine, or iodine,and the alkali metal may include, e.g., lithium, sodium, potassium,rubidium, cesium, francium, or the like.

The phosphonium cation-containing compound may be prepared by reacting aphosphine compound with an alkyl halide, an aryl halide, or an aralkylhalide in the presence of a solvent. The phosphonium cation-containingcompound may be present in a phosphonium cation-containing salt and theanilide anion-containing compound may be present in an anilideanion-containing salt. Examples of the phosphine compound may includetriphenylphosphine, methyldiphenylphosphine, dimethylphenylphosphine,ethyldiphenylphosphine, diphenylpropylphosphine,isopropyldiphenylphosphine, and diethylphenylphosphine.

Reaction between the compounds of Formulae 5 and 6 may be be performedin an organic solvent, e.g.,methanol, methylene chloride, acetonitrile,N,N-dimethylformamide, and toluene. The phosphonium cation-containingcompound and the anilide anion-containing compound may be reacted in amole ratio of 1:1 to 1:6. The reaction may be performed by mixing thecompounds of Formulae 5 and 6. Reaction between a phosphine compound andan alkyl halide, an aryl halide, or an aralkyl halide may produce thephosphonium cation-containing compound, which may be added to aphenylene-bis-benzamide anion-containing compound without an additionalseparation process.

The anion-containing compound may exhibit good flowability when twomolecules form an anion via hydrogen bonding clusters. For example, itis believed that, when two molecules form hydrogen bonding clusters,anions may form a stronger bond with cations, thereby suppressingreactivity of the anion-containing compound, and as weak hydrogen bondsare rapidly broken, the cation catalyst system participates in curingreaction, thereby allowing the anion-containing compound to exhibitrapid curability.

In an implementation, the phosphonium compound may be present in theepoxy resin composition in an amount of about 0.01 wt % to about 5 wt %,e.g., about 0.02 wt % to about 1.5 wt % or about 0.05 wt % to about 1.5wt %, in terms of solid content. Within this range, the epoxy resincomposition can secure flowability without delaying time for curingreaction.

In an implementation, the epoxy resin composition may further include anon-phosphonium curing catalyst which does not contain phosphonium.Examples of non-phosphonium curing catalysts may include tertiaryamines, organometallic compounds, organophosphorus compounds, imidazole,boron compounds, and the like. Examples of tertiary amines may includebenzyldimethylamine, triethanolamine, triethylenediamine,diethylaminoethanol, tri(dimethylaminomethyl)phenol,2,2-(dimethylaminomethyl)phenol, 2,4,6-tris(diaminomethyl)phenol,tri-2-ethyl hexanoate, and the like. Examples of organometalliccompounds include chromium acetylacetonate, zinc acetylacetonate, nickelacetylacetonate, and the like. Examples of organophosphorus compoundsmay include tris-4-methoxyphosphine, triphenylphosphine,triphenylphosphinetriphenylborane, triphenylphosphine-1,4-benzoquinoneadducts, and the like. Examples of imidazoles may include2-methylimidazole, 2-phenylimidazole, 2-aminoimidazole,2-methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole, 2-heptadecylimidazole, and the like. Examples of boron compounds may includetriphenylphosphine tetraphenyl borate, tetraphenyl borate,trifluoroborane-n-hexylamine, trifluoroborane monoethylamine,tetrafluoroborane triethylamine, tetrafluoroboraneamine, and the like.In an implementation, it is possible to use1,5-diazabicyclo[4.3.0]non-5-ene (DBN),1,8-diazabicyclo[5.4.0]undec-7-ene (DBU), and a phenol novolac resinsalt. For example, the organophosphorus compounds, the boron compounds,and the amines or imidazole curing accelerators may be used alone or incombination. Adducts obtained by pre-reacting an epoxy resin or a curingagent may be used as the curing catalyst.

In an implementation, the phosphonium compound represented by Formula 4may be present in the curing catalyst in an amount of about 10 wt % toabout 100 wt %, e.g., about 60 wt % to about 100 wt %. Within thisrange, the epoxy resin composition can secure flowability withoutdelaying time for curing reaction.

In an implementation, the curing catalyst may be present in the epoxyresin composition in an amount of about 0.01 wt % to about 5 wt %, e.g.,about 0.02 wt % to about 1.5 wt % or about 0.05 wt % to about 1.5 wt %,in terms of solid content. Within this range, the epoxy resincomposition can secure flowability without delaying time for curingreaction.

(E) Silicon Compound

In an implementation, the epoxy resin composition may include a siliconcompound, e.g., a compound represented by Formula 7.

In Formula 7, R₆, R₇, R₈, R₉, R₁₀, R₁₁, R₁₂ and R₁₃ may eachindependently be or include, e.g., a substituted or unsubstituted C₁ toC₁₀ alkyl group or aryl group. W, X, Y and Z may each independently beor include, e.g., a substituted or unsubstituted C₁ to C₁₅₀ aliphatichydrocarbon group, a substituted or unsubstituted C₆ to C₃₀ aromatichydrocarbon group, a substituted or unsubstituted C₁ to C₃₀ hydrocarbongroup including a hetero atom, hydrogen, an epoxy-containing group, anamino group, a nitro group, a carboxyl group, an ester-containing group,an ether-containing group, a halogen group, or a hydroxyl group; a, band c may each independently an integer of 0 to 30; and a+b+c may be aninteger of 5 or more.

In an implementation, in Formula 7, W, X, Y and Z may each independentlybe a group represented by one of the following Formulae 7a to 7c. InFormulae 7a to 7c, “*” is a bonding site.

In Formula 7a, R₁₄ may be, e.g., a C₁ to C₁₀ alkylene group or a C₆ toC₂₀ arylene group. R₁₅ may be, e.g., hydrogen or a C₁ to C₃₀ alkylgroup.

[Formula 7b]

*—[R₁₆—O]_(d)—[R₁₇—O]_(e)—R₁₈  Formula 7b

In Formula 7b, R₁₆ and R₁₇ may each independently be, e.g., a C₁ to C₂₀alkylene group or a C₆ to C₂₀ arylene group. R₁₈ may be, e.g., hydrogenor a C₁ to C₃₀ alkyl group. d and e may each independently an integer of0 to 30; and d+e may be an integer of 3 to 60.

In Formula 7c, R₁₉, R₂₀ and R₂₁ may each independently be, e.g., a C₁ toC₂₀ alkylene group or a C₆ to C₂₀ arylene group. f and g may eachindependently be an integer of 0 to 30; and f+g may be an integer of 3to 60.

In an implementation, in Formula 7, all of R₆, R₇, R₈, R₉, R₁₀, R₁₁,R₁₂, R₁₃, W, and Z may be CH₃.

In an implementation, the silicon compound may have a viscosity of,e.g., about 10 mm²/s to about 10,000 mm²/s.

In an implementation, the silicon compound may be present in the epoxyresin composition in an amount of 0.01 wt % to about 1.5 wt %, e.g.,about 0.05 wt % to about 1.5 wt % or about 0.1 wt % to about 1.2 wt %,in terms of solid content. Within this range, the epoxy resincomposition may help improve formability and reliability by reducingcracking and delamination of an epoxy resin upon compression molding.

In an implementation, the composition may further include a suitableadditive. In an implementation, the additive may include at least one ofa coupling agent, a release agent, a stress reliever, a crosslinkingenhancer, a leveling agent, and a coloring agent.

In an implementation, the coupling agent may include, e.g., epoxysilane,aminosilane, mercaptosilane, alkylsilane, or alkoxysilane. In animplementation, the coupling agent may be present in an amount of, e.g.,about 0.1 wt % to about 1 wt % in the epoxy resin composition.

In an implementation, the release agent may include, e.g., paraffin wax,ester wax, higher fatty acids, metal salts of higher fatty acids,natural fatty acids, or natural fatty acid metal salts. In animplementation, the release agent may be present in an amount of, e.g.,about 0.1 wt % to about 1 wt % in the epoxy resin composition.

In an implementation, the stress reliever may include, e.g., modifiedsilicone oil, silicone elastomers, silicone powder, or silicone resin.In an implementation, the stress reliever may be present in an amount ofabout 6.5 wt % or less, e.g., about 1 wt % or less or about 0.1 wt % toabout 1 wt % in the epoxy resin composition. As the modified siliconeoil, a suitable silicone polymers having good heat resistance may beused. The modified silicone oil may include about 0.05 wt % to about 1.5wt % of a silicone oil mixture based on the total weight of the epoxyresin composition, wherein the mixture includes at least one selectedfrom the group consisting of silicone oil having an epoxy functionalgroup, silicone oil having an amine functional group, silicone oilhaving a carboxyl functional group, and a combination thereof. If theamount of the silicone oil is greater than 1.5 wt %, surfacecontamination may easily occur and lengthy resin bleed could beencountered. If the amount of the silicone oil is less than 0.05 wt %,sufficiently low modulus of elasticity may not be obtained. In animplementation, silicone powder having a median particle diameter ofabout 15 μm or less may be used because the powder may not deterioratemoldability. In an implementation, the silicone powder may be present inan amount of about 5 wt % or less, e.g., about 0.1 wt % to about 5 wt %,based on the total weight of the epoxy resin composition.

In an implementation, the additive may be present in an amount of about0.1 wt % to about 10 wt %, e.g., about 0.1 wt % to about 3 wt %, in theepoxy resin composition.

The epoxy resin composition may be curable at low temperature. Forexample, a curing initiation temperature may be about 90° C. to about120° C. Within this range, the epoxy resin composition may besufficiently cured at low temperature, thereby securing curing at lowtemperature.

In an implementation, the epoxy resin composition may have a flow lengthof about 30 inches to about 120 inches, e.g., about 50 inches to about80 inches, as measured using a transfer molding press at 175° C. under aload of 70 kgf/cm² in accordance with EMMI-1-66. Within this range, theepoxy resin composition may be used for desired applications.

In an implementation, the epoxy resin composition may have a curingshrinkage rate of less than about 0.40%, e.g., about 0.01% to about0.39%, as calculated according to Equation 1. Within this range, thecuring shrinkage rate may low and the epoxy resin composition thus maybe used for desired applications.

<Equation 1>

Curing shrinkage=(|C−D|/C)×100  Equation 1

In Equation 2, C is the length of a specimen obtained by transfermolding of the epoxy resin composition at 175° C. under a load of 70kgf/cm², and D is the length of the specimen after post-curing thespecimen at 170° C. to 180° C. for 4 hours and cooling.

In an implementation, the epoxy resin composition may have a storagestability of about 85% or more, e.g., about 90% or more or about 92% ormore, as calculated according to Equation 2.

<Equation 2>

Storage stability=(F1/F0)×100  Equation 2

In Equation 2, F1 is the flow length (in inches) of the epoxy resincomposition measured after storing the composition at 25° C./50% RH for72 hours using a transfer molding press at 175° C. and 70 kgf/cm² inaccordance with EMMI-1-66, and F0 is the initial flow length (in inches)of the epoxy resin composition.

In an implementation, in the epoxy resin composition, the epoxy resinmay be used alone or in the form of adducts, such as a melt masterbatch, obtained by pre-reacting the epoxy resin with an additive, suchas a curing agent, a curing catalyst, a release agent, a coupling agent,and a stress reliever. Although there is no particular restriction as tothe method of preparing the epoxy resin composition according to thepresent invention, the epoxy resin composition may be prepared byuniformly mixing all components of the resin composition using asuitable mixer, such as a Henschel mixer or a Lödige mixer, followed bymelt-kneading in a roll mill or a kneader at about 90° C. to about 120°C., cooling, and pulverizing.

The epoxy resin composition according to an embodiment may be used in abroad range of applications requiring such an epoxy resin composition,e.g., in encapsulation of semiconductor devices, adhesive films,insulating resin sheets such as prepregs and the like, circuit boards,solder resists, underfills, die bonding materials, and componentreplenishing resins.

Encapsulation of Semiconductor Device

The epoxy resin composition according to an embodiment may be used toencapsulate a semiconductor device and may include, e.g., an epoxyresin, a curing agent, a phosphonium compound-containing curingcatalyst, inorganic filler, and additives.

A semiconductor device according to an embodiment may be encapsulatedwith the epoxy resin composition as set forth above.

FIG. 1 illustrates a cross-sectional view of a semiconductor deviceaccording to one embodiment. Referring to FIG. 1, a semiconductor device100 according to this embodiment may include, e.g., a wiring board 10,bumps 30 on the wiring board 10, and a semiconductor chip 20 on thebumps 30. A gap between the wiring board 10 and the semiconductor chip20 may be encapsulated with an epoxy resin composition 40. The epoxyresin composition may be an epoxy resin composition according toembodiments.

FIG. 2 illustrates a cross-sectional view of a semiconductor deviceaccording to another embodiment. Referring to FIG. 2, a semiconductordevice 200 according to this embodiment may include, e.g., a wiringboard 10, bumps 30 on the wiring board 10, and a semiconductor chip 20on the bumps 30. A gap between the wiring board 10 and the semiconductorchip 20 and the entirety of a top surface of the semiconductor chip 20may be encapsulated with an epoxy resin composition 40. The epoxy resincomposition may be an epoxy resin composition according to embodiments.

FIG. 3 illustrates a cross-sectional view of a semiconductor deviceaccording to a further embodiment. Referring to FIG. 3, a semiconductordevice 300 according to this embodiment may include, e.g., a wiringboard 10, bumps 30 on the wiring board 10, and a semiconductor chip 20on the bumps 30. A gap between the wiring board 10 and the semiconductorchip 20 and the entirety of a side surface of the semiconductor chip 20except for the top surface may be encapsulated with an epoxy resincomposition 40. The epoxy resin composition may be an epoxy resincomposition according to embodiments.

In FIGS. 1 to 3, the size of each wiring board, bump and semiconductorchip, and the numbers of bumps are optional and may be modified.

The semiconductor device may be encapsulated most commonly with theepoxy resin composition by low-pressure transfer molding. In animplementation, the semiconductor device may also be molded by injectionmolding, casting, and the like. The semiconductor device that may befabricated by such a molding process may include, e.g., a copper leadframe, an iron lead frame, an iron lead frame pre-plated with at leastone metal selected from nickel, copper, and palladium, or an organiclaminate frame.

The following Examples and Comparative Examples are provided in order tohighlight characteristics of one or more embodiments, but it will beunderstood that the Examples and Comparative Examples are not to beconstrued as limiting the scope of the embodiments, nor are theComparative Examples to be construed as being outside the scope of theembodiments. Further, it will be understood that the embodiments are notlimited to the particular details described in the Examples andComparative Examples.

Details of the components used in Examples and Comparative Examples areas follows.

(A) Epoxy resin

NC-3000 (produced by Nippon Kayaku), a biphenyl type epoxy resin.

(B) Curing agent

HE100C-10 (produced by Air Water), a xyloc type phenol resin.

(C) Inorganic filler

A mixture of spherical fused silica having an average particle diameterof 18 μm and spherical fused silica having an average particle diameterof 0.5 μm (in a weight ratio of 9:1).

(D) Curing catalyst

Curing catalysts (D1) and (D2), represented by Formulae 4c and 4d, wereprepared as followed.

(D1)

To a 1 L round bottom flask, 100 g of triphenylphosphine, 60 g of4-bromophenol, and 3.7 g of NiBr₂ were introduced, followed by adding130 g of ethylene glycol, and then reacted at 180° C. for 6 hours,thereby obtaining a phosphonium bromide represented by Formula 4c′.

21.3 g of salicylanilide was added to 50 g of MeOH, followed by adding21.6 g of 25% sodium methoxide solution, which in turn was completelydissolved while reacting at ambient temperature for 30 minutes. To thesolution, a solution of 43.5 g of the phosphonium bromide (salt)represented by Formula 4c′ (previously dissolved in 50 g of MeOH) wasslowly added. The mixture was allowed to further react for 1 hour. Theresulting white solid was filtered to obtain 47 g of a compound. Thecompound was identified by NMR data as a compound represented by Formula4c.

¹H NMR δ 7.87 (3H, t), 7.85-7.66 (15H, m), 7.38 (2H, dd), 7.31 (2H, dt),7.18 (1H, dt), 7.05-6.97 (3H, m), 6.71 (1H, d), 6.54 (1H, t)

(D2)

42.6 g of salicylanilide was added to 50 g of MeOH, followed by adding21.6 g of 25% sodium methoxide solution, which in turn was completelydissolved while reacting at ambient temperature for 30 minutes. To thesolution, a solution of 43.5 g of the phosphonium bromide (salt)represented by Formula 4c′ (previously dissolved in 50 g of MeOH) wasslowly added. The mixture was allowed to further react for 1 hour. Theresulting white solid was filtered to obtain 66 g of a compound. Thecompound was identified by NMR data as a compound represented by Formula4d.

¹H NMR δ 7.95-7.87 (5H, m), 7.82-7.66 (16H, m), 7.43 (2H, dd), 7.35 (4H,t), 7.26 (2H, t), 7.08-7.03 (4H, m), 6.85 (2H, dt), 6.67 (2H, dt)

In the compound represented by Formula 4d, phosphonium andsalicylanilide (corresponding to an anion part) were found to be presentin a ratio of 1:2 in the integration of ¹H NMR spectrum. Whensalicylanilide was used in an amount exceeding 2 equivalent weights,phosphonium and salicylanilide were found to maintain the ratio of 1:2in the integration of ¹H NMR spectrum. Therefore, it was determined thatthe structure represented by Formula 4d was a stable form.

(D3) An adduct of triphenyl phosphine and 1,4-benzoquinone

(E) Silicon compound

(E1) BY 16-750 (Dow Corning Chemical): Carboxyl Functional silicon Fluid

(E2) FZ-3736 (Dow Corning Chemical): Epoxy Functional Silicone Fluid

(E3) KF-101 (Shin-etsu silicone): Epoxy Functional Silicone Fluid

(E4) X-22-162c (Shin-etsu silicone): Carboxyl Functional silicon Fluid

(F) Coupling agent

A mixture of (F1) mercaptopropyl trimethoxy silane, KBM-803 (produced byShinetsu Co., Ltd.) and (F2) methyl trimethoxy silane, SZ-6070 (producedby Dow Corning Chemical Co., Ltd.).

(G) Additive

(G1) Carnauba wax as a mold release agent, and (G2) Carbon black, MA-600(produced by Matsushita Chemical Co., Ltd.) as a coloring agent.

EXAMPLES AND COMPARATIVE EXAMPLES

The components were weighed as listed in Table 1 (unit: parts by weight)and uniformly mixed using a Henschel mixer to prepare first powdercompositions. Then, each of the compositions was melt-kneaded by acontinuous kneader at 95° C., cooled, and pulverized to prepare an epoxyresin composition for encapsulation of a semiconductor device.

TABLE 1 Comparative Example Example 1 2 3 4 5 6 7 8 1 2 (A) 8.5 8.5 8.58.5 8.5 8.5 8.5 8.5 8.5 8.5 (B) 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0(C) 85.0  85.0  85.0  85.0  85.0  85.0  85.0  85.0  85.1  85.0  (D) D10.4 0.4 0.4 0.4 — — — — — — D2 — — — 0.4 0.4 0.4 0.4 — — D3 — — 0.4 — —— — — 0.4 0.4 (E) E1 0.1 — — — 0.1 — — — — 0.1 E2 — 0.1 — — — 0.1 — — —— E3 — — 0.1 — — — 0.1 — — — E4 — — — 0.1 — — — 0.1 — — (F) (F1) 0.2 0.20.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 (F2) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.20.2 (G) (G1) 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 (G2) 0.3 0.3 0.30.3 0.3 0.3 0.3 0.3 0.3 0.3 Total 100    100    100    100    100   100    100    100    100    100   

(1) Flowability (inches): The flow length of each of the epoxy resincompositions was measured using a transfer molding press in a test moldat 175° C. under a load of 70 kgf/cm² in accordance with EMMI-1-66.EMMI-1-66 is a method of evaluating the molding flow of a resin toinjection or transfer molding in which the melt is injected into aspiral runner of constant trapezoidal cross section with numbered andsubdivided centimeters marked along the runner. The mold is filled froma sprue at the center of the spiral and pressure is maintained untilflow stops, the number just aft of the molded-spiral tip giving the flowdistance. A higher measured value indicates better flowability.

(2) Curing shrinkage (%): Each of the epoxy resin compositions wasmolded using a transfer molding press in an ASTM mold for flexuralstrength specimen construction at 175° C. and 70 kgf/cm² to obtain amolded specimen (125×12.6×6.4 mm). The specimen was subjected topost-molding curing (PMC) in an oven at 170° C. to 180° C. for 4 hours.After cooling, the length of the specimen was measured using calipers.Curing shrinkage of the epoxy resin composition was calculated accordingto the following Equation 1.

Curing shrinkage=(|C−D|/C)×100

In Equation 1, C is a length of the specimen obtained by transfermolding of the epoxy resin composition at 175° C. under a load of 70kgf/cm², and D is a length of the specimen after post-curing thespecimen at 170° C. to 180° C. for 4 hours and cooling.

(3) Glass transition temperature (° C.): Glass transition temperature ofeach of the epoxy resin compositions prepared in the Examples andComparative Examples was measured using a thermomechanical analyzer(TMA). Here, the TMA was set to heat the resin composition at a rate of10° C./min from 25° C. to 300° C.

(4) Moisture absorption (%): Each of the resin compositions prepared inthe Examples and Comparative Examples was molded at a mold temperatureof 170° C. to 180° C., a clamp pressure of 70 kg/cm², a transferpressure of 1,000 psi and a transfer speed of 0.5 cm/s to 1 cm/s for acuring time of 120 sec to obtain a cured specimen in the form of a dischaving a diameter of 50 mm and a thickness of 1.0 mm. The specimen wassubjected to post-molding curing (PMC) in an oven at 170° C. to 180° C.for 4 hours and allowed to stand at 85° C. and 85% RH for 168 hours.Weights of the specimen before and after moisture absorption weremeasured. Moisture absorption of the resin composition was calculatedaccording to the following Equation 3.

Moisture absorption (%)=[(Weight of the specimen after moistureabsorption−Weight of the specimen before moisture absorption)÷(Weight ofthe specimen before moisture absorption)]×100.

(5) Adhesive strength (kgf): A copper metal device having a size adaptedto a mold for adhesive strength measurement was prepared as a testpiece. Each of the resin compositions prepared in the Examples andComparative Examples was molded on a test piece at a mold temperature of170° C. to 180° C., a clamp pressure of 70 kgf/cm², a transfer pressureof 1,000 psi, and a transfer speed of 0.5 cm/s to 1 cm/s for a curingtime of 120 sec to obtain a cured specimen. The specimen was subjectedto post-molding curing (PMC) in an oven at 170° C. to 180° C. for 4hours. The area of the epoxy resin composition in contact with thespecimen was 40±1 mm². The adhesive strength of the epoxy resincomposition was measured using a universal testing machine (UTM). 12specimens of each composition were produced. After the measurementprocedure was repeated, the measured adhesive strength values wereaveraged.

(6) Degree of cure (Shore-D): Each of the epoxy resin compositions wascured using a multi-plunger system (MPS) equipped with a mold at 175° C.for 50 sec, 60 sec, 70 sec, 80 sec, and 90 sec to construct exposed thinquad flat packages (eTQFPs), each including a copper metal device havinga width of 24 mm, a length of 24 mm and a thickness of 1 mm. Hardnessvalues of the cured products in the packages on the mold according tothe curing periods of time were directly measured using a Shore Ddurometer. A higher hardness value indicates better degree of cure.

(7) Storage stability (%): The flow length (in inches) of each of theepoxy resin compositions was measured in accordance with the methoddescribed in (1) while storing the epoxy resin compositions for 1 weekin a thermo-hygrostat set to 25° C./50% RH and measuring every 24 hours.Percent (%) of the flow length after storage to the flow lengthimmediately after preparation of the composition was calculated. Ahigher value indicates better storage stability.

(8) Crack resistance (reliability): A BOC-type semiconductor packageproduced using the epoxy resin composition was dried at 125° C. for 24hours, followed by 5 cycles of thermal shock testing. Then, thesemiconductor package was left at 30° C. and 60% RH for 120 hours andtreated by IR reflow three times at 260° C. for 10 seconds(preconditioning), followed by observing the occurrence of peeling ofthe epoxy resin composition and cracking of the semiconductor package.Then, after 1,000 cycles of thermal shock testing (1 cycle refers to aseries of exposures of the package to −65° C. for 10 min, 25° C. for 10min, and 150° C. for 10 min) using a temperature cycle tester, theoccurrence of peeling of the epoxy resin composition and cracking of thesemiconductor package was evaluated by Scanning Acoustic Tomograph(SAT), which is a non-destructive test device.

TABLE 2 Comparative Example Example Evaluation item 1 2 3 4 5 6 7 8 1 2Basic physical Flowability (inch) 60 61 61 60 68 68 67 68 55 58properties Curing shrinkage (%) 0.38 0.38 0.39 0.37 0.33 0.32 0.31 0.320.42 0.40 Glass transition temp. (° C.) 128 129 129 129 130 131 131 131121 122 Moisture absorption (%) 0.21 0.21 0.22 0.20 0.21 0.22 0.22 0.220.25 0.26 Adhesive strength (kgf) 77 78 76 79 78 77 77 77 71 70Evaluation of Degree of 50 sec 70 72 71 72 70 69 71 69 52 60 packagescure (Shore- 60 sec 73 72 72 74 71 71 71 71 60 64 D) 70 sec 75 73 75 7774 73 73 73 64 66 according to 80 sec 77 76 77 78 76 76 75 75 67 70curing time 90 sec 78 77 78 79 78 77 76 77 67 71 Storage 24 hr 98% 96%98% 97% 99% 99% 99% 99% 90% 92% stability 48 hr 95% 94% 94% 92% 95% 95%95% 95% 84% 88% 72 hr 92% 91% 91% 92% 91% 91% 91% 91% 79% 80%Reliability Number of 0 0 2 2 0 0 1 1 9 7 packages suffering crackingNumber of 2 1 3 3 0 0 3 2 45 20 packages suffering peeling Number of 8888 88 88 88 88 88 88 88 88 tested semiconductors

Comparing the compositions of Examples 1 to 8 with the compositions ofComparative Examples 1 and 2, it may be seen that the epoxy resincompositions of Examples 1 to 8 had higher flowability and higher degreeof cure in shorter time in view of curability for each curing period oftime, relative to the compositions of Comparative Examples 1 and 2. Forstorage stability, it may be seen that the epoxy resin compositions ofExamples 1 to 8 showed less change in flowability after 72-hour storageand had good reliability.

Comparing the compositions of Examples 1 to 4 (in which one moleculeforms an anion) with the compositions of Examples 5 to 8 (in which twomolecules form an anion by forming hydrogen bonding clusters), it may beseen that the compositions showed substantially the same level of curingstrength for each curing period of time. In addition, the compositionsin which two molecules form the anion showed better flowability.According to this result, it is believed that, when two molecules formhydrogen bonding clusters, more stable ionic bonds with cations mayoccur to suppress reactivity, and as weak hydrogen bonds are rapidlybroken, the cation catalyst portion may participate in the curingreaction. Comparing with the composition of Comparative Example 1(prepared without using the silicon compound), it may be be seen thatthe compositions of the Examples suffered from less cracking and peelingand had improved reliability by addition of the silicon compound.

The compositions of the Comparative Examples (not including thephosphonium compound of the embodiments) had low storage stability, highcuring shrinkage, low flowability, and low reliability. Therefore, itmay be seen that the compositions of the Comparative Examples may notensure the desirable effects of the embodiments when used in a package.

By way of summation and review, with the trend toward compact,lightweight and high performance electronic devices, high integration ofsemiconductor devices has been accelerated year by year. Increasingdemand for surface mounting of semiconductor devices has raisedadditional issues. Packaging materials for semiconductor devices mayexhibit rapid curability to improve productivity and storage stabilityto improve handling performance during distribution and storage.

The embodiments may provide an epoxy resin composition for encapsulationof a semiconductor device, which is capable of being cured in a shorttime or at low temperature, and which may have high storage stability,high curing strength, good flowability upon molding and highreliability, and a semiconductor device including the epoxy resincomposition.

The embodiments may provide an epoxy resin composition for encapsulationof a semiconductor device, which is capable of being cured in a shorttime or at low temperature.

The embodiments may provide an epoxy resin composition for encapsulationof a semiconductor device, which may catalyze curing only at a desiredcuring temperature without exhibiting any curing activity at atemperature deviating from the desired curing temperature and which mayhave high storage stability.

The embodiments may provide an epoxy resin composition for encapsulationof a semiconductor device, which has high curing strength.

The embodiments may provide an epoxy resin composition for encapsulationof a semiconductor device, which exhibits good flowability upon molding.

The embodiments may provide an epoxy resin composition for encapsulationof a semiconductor device, which exhibits high reliability.

The embodiments may provide a semiconductor device including the epoxyresin composition.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated.

Accordingly, it will be understood by those of skill in the art thatvarious changes in form and details may be made without departing fromthe spirit and scope of the present invention as set forth in thefollowing claims.

What is claimed is:
 1. An epoxy resin composition for encapsulation of asemiconductor device, the composition comprising: an epoxy resin; acuring agent; an inorganic filler; a curing catalyst; and a siliconcompound, wherein the curing catalyst includes a phosphonium compoundrepresented by the following Formula 4:

wherein, in Formula 4, R₁, R₂, R₃, and R₄ are each independently asubstituted or unsubstituted C₁ to C₃₀ aliphatic hydrocarbon group, asubstituted or unsubstituted C₆ to C₃₀ aromatic hydrocarbon group, or asubstituted or unsubstituted C₁ to C₃₀ hydrocarbon group including ahetero atom; X₁ is a substituted or unsubstituted C₆ to C₃₀ arylenegroup, a substituted or unsubstituted C₃ to C₁₀ cycloalkylene group, ora substituted or unsubstituted C₁ to C₂₀ alkylene group; R₅ is hydrogen,a hydroxyl group, a C₁ to C₂₀ alkyl group, a C₆ to C₃₀ aryl group, a C₃to C₃₀ heteroaryl group, a C₃ to C₁₀ cycloalkyl group, a C₃ to C₁₀heterocycloalkyl group, a C₇ to C₃₀ arylalkyl group, or a C₁ to C₃₀heteroalkyl group; and m is an integer of 0 to 5, wherein the siliconcompound comprises a silicon compound represented by the followingFormula 7:

wherein, in Formula 7, R₆, R₇, R₈, R₉, R₁₀, R₁₁, R₁₂, and R₁₃ are eachindependently a substituted or unsubstituted C₁ to C₁₀ alkyl group oraryl group; W, X, Y and Z are each independently a substituted orunsubstituted C₁ to C₁₅₀ aliphatic hydrocarbon group, a substituted orunsubstituted C₆ to C₃₀ aromatic hydrocarbon group, a substituted orunsubstituted C₁ to C₃₀ hydrocarbon group including a hetero atom,hydrogen, an epoxy-containing group, an amino group, a nitro group, acarboxyl group, an ester-containing group, an ether-containing group, ahalogen group, or a hydroxyl group; a, b and c are each independently aninteger of 0 to 30; and a+b+c is an integer of 5 or more.
 2. The epoxyresin composition as claimed in claim 1, wherein R₁, R₂, R₃, and R₄ areeach independently a substituted or unsubstituted C₆ to C₃₀ aryl group.3. The epoxy resin composition as claimed in claim 2, wherein at leastone of R₁, R₂, R₃, and R₄ is a hydroxyl group-substituted C₆ to C₃₀ arylgroup.
 4. The epoxy resin composition as claimed in claim 1, wherein thephosphonium compound is represented by one of the following Formulae 4ato 4h:


5. The epoxy resin composition as claimed in claim 1, wherein W, X, Yand Z are each independently a group represented by one of the followingFormulae 7a to 7c, in which * is a bonding site,

wherein, in Formula 7a, R₁₄ is a C₁ to C₁₀ alkylene group or a C₆ to C₂₀arylene group, and R₁₅ is hydrogen or a C₁ to C₃₀ alkyl group.[Formula 7b]*—[R₁₆—O]_(d)—[R₁₇—O]_(e)—R₁₈  Formula 7b wherein, in Formula 7b, R₁₆and R₁₇ are each independently a C₁ to C₂₀ alkylene group or a C₆ to C₂₀arylene group; R₁₈ is hydrogen or a C₁ to C₃₀ alkyl group; d and e areeach independently an integer of 0 to 30; and d+e is an integer of 3 to60.

wherein, in Formula 7c, R₁₉, R₂₀ and R₂₁ are each independently a C₁ toC₂₀ alkylene group or a C₆ to C₂₀ arylene group; f and g are eachindependently an integer of 0 to 30; and f+g is an integer of 3 to 60.6. The epoxy resin composition as claimed in claim 1, wherein the epoxyresin includes a bisphenol A epoxy resin, a bisphenol F epoxy resin, aphenol novolac epoxy resin, a tert-butyl catechol epoxy resin, anaphthalene epoxy resin, a glycidylamine epoxy resin, a cresol novolacepoxy resin, a biphenyl epoxy resin, a linear aliphatic epoxy resin, acycloaliphatic epoxy resin, a heterocyclic epoxy resin, a spiroring-containing epoxy resin, a cyclohexane dimethanol epoxy resin, atrimethylol epoxy resin, or a halogenated epoxy resin.
 7. The epoxyresin composition as claimed in claim 1, wherein the curing agentincludes a phenol aralkyl phenol resin, a phenol novolac phenol resin, axyloc phenol resin, a cresol novolac phenol resin, a naphthol phenolresin, a terpene phenol resin, a polyfunctional phenol resin, adicyclopentadiene-based phenol resin, a novolac phenol resin synthesizedfrom bisphenol A and resorcinol, a polyhydric phenolic compound, an acidanhydride, or an aromatic amine.
 8. The epoxy resin composition asclaimed in claim 1, wherein the curing catalyst is present in the epoxyresin composition in an amount of about 0.01 wt % to about 5 wt %, interms of solid content.
 9. The epoxy resin composition as claimed inclaim 1, wherein the phosphonium compound is present in the curingcatalyst in an amount of about 10 wt % to about 100 wt %, based on atotal weight of the curing catalyst.
 10. The epoxy resin composition asclaimed in claim 1, wherein the silicon compound is present in the epoxyresin composition in an amount of about 0.01 wt % to about 1.5 wt %, interms of solid content.
 11. The epoxy resin composition as claimed inclaim 1, wherein the epoxy resin composition has a curing shrinkage rateof less than about 0.40%, as calculated according to the followingEquation 1:<Equation 1>Curing shrinkage=(|C−D|/C)×100  Equation 1 wherein, in Equation 1, C isa length of a specimen obtained by transfer molding of the epoxy resincomposition at 175° C. under a load of 70 kgf/cm², and D is a length ofthe specimen after post-curing the specimen at 170° C. to 180° C. for 4hours and cooling.
 12. The epoxy resin composition as claimed in claim1, wherein the epoxy resin composition has a storage stability of about85% or more, as calculated according to the following Equation 2:<Equation 2>Storage stability=(F1/F0)×100  Equation 2 wherein, in Equation 2, F1 isa flow length in inches of the epoxy resin composition measured afterstoring the composition at 25° C./50% RH for 72 hours using a transfermolding press at 175° C. and 70 kgf/cm² in accordance with EMMI-1-66,and F0 is an initial flow length in inches of the epoxy resincomposition.
 13. The epoxy resin composition as claimed in claim 1,wherein m is 0 or
 1. 14. A semiconductor device encapsulated with theepoxy resin composition as claimed in claim
 1. 15. A method ofencapsulating a semiconductor device, the method comprisingencapsulating the semiconductor device with the epoxy resin compositionas claimed in claim 1.